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Effect of thickness and annealing temperature on the electri | 16025
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International Research Journal of Engineering Science, Technology and Innovation

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Effect of thickness and annealing temperature on the electrical properties of Tellurium thin films

Abstract

Mahdi H. Suhail*, Souad G. Kaleel and Marwa R. Fahad

Semiconducting properties of evaporated tellurium thin films, in the thickness range of 100 to 400 k are studied and correlated with observed electrical properties. The electrical properties of the Te films at room temperature with rate of deposition equal to 80 nm/sec for different thicknesses (400, 600 and800)nm and different annealing temperatures (373and 423 )K were studies. The conductivity of Te films with different thicknesses and annealing temperatures has been investigated as a function of frequency and temperatures. The type of charge carriers, carrier concentration (nH) and Hall mobility (μH) have been estimated from Hall measurements.

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